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HongAn Microwave Co., Ltd.

High-Performance Inductors & Capacitors, Engineered for RF Excellence

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High-K Oxide Dielectric MOS Capacitors 30V High Density 470pF Single Layer Chip High SRF for 5G RF Front Ends
High-K Oxide Dielectric MOS Capacitors 30V High Density 470pF Single Layer Chip High SRF for 5G RF Front Ends
  • High-K Oxide Dielectric MOS Capacitors 30V High Density 470pF Single Layer Chip High SRF for 5G RF Front Ends
  • High-K Oxide Dielectric MOS Capacitors 30V High Density 470pF Single Layer Chip High SRF for 5G RF Front Ends
  • High-K Oxide Dielectric MOS Capacitors 30V High Density 470pF Single Layer Chip High SRF for 5G RF Front Ends
Products Detailed
High-K Oxide Dielectric MOS Capacitor HACC471S30V500 — 470pF 30V Single Layer Chip for 5G RF Front Ends Entity summary. The HACC471S30V500 is a single...
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