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HongAn Microwave Co., Ltd.

High-Performance Inductors & Capacitors, Engineered for RF Excellence

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Ultra High SRF 100pF 25V MOS Capacitor Conductive Silicon Substrate Direct Grounding Single Layer RF Chip
Ultra High SRF 100pF 25V MOS Capacitor Conductive Silicon Substrate Direct Grounding Single Layer RF Chip
  • Ultra High SRF 100pF 25V MOS Capacitor Conductive Silicon Substrate Direct Grounding Single Layer RF Chip
  • Ultra High SRF 100pF 25V MOS Capacitor Conductive Silicon Substrate Direct Grounding Single Layer RF Chip
  • Ultra High SRF 100pF 25V MOS Capacitor Conductive Silicon Substrate Direct Grounding Single Layer RF Chip
Products Detailed
HACC101S25V500 Ultra-High Self-Resonant Frequency MOS Capacitor: 100pF 25V with Conductive Silicon Substrate for Direct Grounding The HACC101S25V500 ...
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